我们研发并生产的2-6英半导体级以及半绝缘级高纯度砷化镓晶体和晶片被广泛应用于半导体集成电路以及LED通用照明等领域。
Our 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.
半导体砷化镓规格 Specifications of semi-conducting GaAs wafer
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生长方法 |
VGF |
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掺杂类型 |
P型：锌 |
N型：硅 |
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晶片形状 |
圆形（尺寸2、3、4、6英寸） |
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晶向 |
(100)±0.5° |
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* Other Orientations maybe available upon request |
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Dopant |
硅 （N 型） |
锌 （P 型） |
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载流子浓度 |
( 0.8-4) × 1018 |
( 0.5-5) × 1019 |
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迁移率 |
( 1-2.5) × 103 |
50-120 |
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位错 |
100-5000 |
3,000-5,000 |
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直径 |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
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厚度 |
350±25 |
625±25 |
625±25 |
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TTV [P/P] (µm) |
≤ 4 |
≤ 4 |
≤ 4 |
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TTV [P/E] (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
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WARP (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
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OF (mm) |
17±1 |
22±1 |
32.5±1 |
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OF / IF (mm) |
7±1 |
12±1 |
18±1 |
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Polish* |
E/E, |
E/E, |
E/E, |
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*E=Etched, P=Polished（*E=腐蚀, P=抛光） |
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**If needed by customer |
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半绝缘砷化镓 Specifications of semi-insulating GaAs wafer
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生长方法 Growth Method |
VGF |
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掺杂类型 Dopant |
SI 型：碳 SI Type: Carbon |
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晶片形状 Wafer Shape |
圆形（尺寸2、3、4、6英寸） Round (DIA: 2", 3", 4", 6") |
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晶向 Surface Orientation * |
(100)±0.5° |
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* Other Orientations maybe available upon request 其他晶向要求可根据客户需求加工 |
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电阻率 Resistivity (Ω.cm) |
≥ 1 × 107 |
≥ 1 × 108 |
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迁移率 Mobility (cm2/V.S) |
≥ 5,000 |
≥ 4,000 |
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位错 Etch Pitch Density (cm2) |
1,500-5,000 |
1,500-5,000 |
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晶片直径 Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
150±0.3 |
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厚度 Thickness (µm) |
350±25 |
625±25 |
625±25 |
675±25 |
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TTV [P/P] (µm) |
≤ 4 |
≤ 4 |
≤ 4 |
≤ 4 |
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TTV [P/E] (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 10 |
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WARP (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 15 |
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OF (mm) |
17±1 |
22±1 |
32.5±1 |
NOTCH |
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OF / IF (mm) |
7±1 |
12±1 |
18±1 |
N/A |
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Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
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*E=Etched, P=Polished （*E=腐蚀, P=抛光） |
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**If needed by customer 根据客户需要 |
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